Samsung has announced that it has started mass-producing 256-gigabit 3D V-NAND flash memory, paving the way for higher-storage SSDs. The South Korean vendor already introduced a 2TB SSD in the Evo 850 line earlier this year, and the latest innovation will double the amount of storage on SSDs by retaining the same size.
Samsung’s new 3D V-NAND flash memory can hold 85.3 billion cells, with each cell holding 3 bits of data, resulting in a total of 256 billion bits, or 256 gigabits. That is a 2x increase from the 128 gigabit that was utilized by Samsung in this year’s offerings. That translates to 32 gigabytes (GB) of storage on a single die of the same size, with Samsung even mentioning that the latest generation V-NAND consumes up to 30 percent less power than the previous generation offering when storing the same amount of data. The third-generation V-NAND will also offer productivity gains of 40 percent when seen against the last generation.
In August 2014, Samsung unveiled its second-generation 3D V-NAND, stacking 3-bit MLCs (multi-level cell) to 32 layers resulting in 128Gb or 16GB of storage on a single die. This time around, the vendor has boosted the number of layers to 48, giving Samsung the ability to cram more data in a smaller space. Traditional NAND has a 2-bit cell structure, with the ability to store two bits of information per cell and a total of four possible states. Samsung’s offering, meanwhile, has three bits per cell and a total of eight states.
Samsung will produce the 3rd generation 48-layer 3-bit MLC V-NAND throughout the remainder of 2015, and will be focusing on the data storage segments with its high-density SSDs, offering connectivity through PCIe NVMe and SAS interfaces. The South Korean vendor has also mentioned that consumer-centric offerings with the new flash memory will be available later this year.