Samsung today announced that it has begun mass producing the industry’s first “through silicon via” (TSV) double data rate-4 (DDR4) memory in 128GB modules aimed at enterprise servers and data centers.
The new TSV DRAM module boasts the largest capacity and the highest energy efficiency of any DRAM module in the market today, while delivering high performance and excellent reliability. The 128GB TSV DDR4 RDIMM comprises of a total of 144 DDR4 chips, arranged into 36 4GB DRAM packages. Each of these contains four 20nm-based 8-gigabit chips that are assembled using cutting-edge TSV packaging technology.
The module is claimed to deliver speeds up to 2,400 megabits per second (Mbps), which happens to be twice as high as the previous highest capacity DRAM modules, while ensuring 50 percent lower power consumption as well.
In the near future, Samsung hopes to introduce newer TSV DRAM modules that will hit data transfer speeds of up to 2667 Mbps and 3200 Mbps. It will also expand the TSV applications into high bandwidth memory (HBM) as well as its consumer product lineup.