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Qualcomm Snapdragon 835 announced, will be manufactured on 10nm FinFET process

Snapdragon 835

Qualcomm has formally announced its next-generation flagship mobile processor, which will succeed the current Snapdragon 820 & 821 SoCs. The Snapdragon 835 will be manufactured on Samsung’s 10-nanometer (nm) FinFET process technology, extending Qualcomm and Samsung’s decade-long strategic foundry collaboration.

Thanks to the new 10nm technology, the Snapdragon 835 will offer a smaller chip footprint, allowing OEMs to pack larger batteries or achieve slimmer designs. The process improvements, coupled with the more advanced chip design will also bring significant improvements in battery life. Qualcomm claims the new 10nm FinFET process will bring performance improvement of up to 27 percent and up to 40% lower consumption.

While Qualcomm hasn’t detailed the Snapdragon 835 SoC yet, it has confirmed that the chipset will come with Qualcomm Quick Charge 4.0, which provides up to 20 percent faster charging times and 30 percent efficiency improvement compared to Quick Charge 3.0. Quick Charge 4.0 will support Dual Charge parallel charge technology, USB Type-C, and USB-Power Delivery standards as well. The third generation Intelligent Negotiation for Optimum Voltage (INOV) will provide real-time thermal management, along with new SM1380 and SM1381 power management ICs with up to 95% peak efficiency and battery differential sensing.

First devices powered by the new Snapdragon 835 SoCs are expected to hit the market in the first half of 2017. Qualcomm being the leading player in the mobile SoC market, we expect the majority of 2017 flagship Android smartphones to be powered by the chipset, including Samsung’s Galaxy S8 and Galaxy S8 Edge.

Source: Qualcomm

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