A few days back, Qualcomm announced that its next flagship mobile SoC, Snapdragon 835 will be manufactured by Samsung on its 10nm FinFET process. It did not reveal much about the SoC then, except that it will integrate the Quick Charge 4.0 standard. However, a new leak out of China has emerged online today, with the chipset’s full specifications.
According to the leak, Qualcomm Snapdragon 835 SoC will carry the model number MSM8998, which was recently spotted on Indian import export tracking portal Zauba. The chipset will be based on Qualcomm’s 64-bit Kryo 200 architecture with an octa-core setup. Graphics will be powered by the Adreno 540 GPU, which will succeed the Adreno 530 GPU integrated with the current Snapdragon 820 and Snapdragon 821 SoCs.
In the connectivity department, the chip is apparently going to integrate the LTE X16 modem, with support for LTE Cat.16 speeds of up to 1Gbps. It will also add support for four-channel LPDDR4X-1866 memory and UFS 2.1 flash storage.
The leak sheds some light on the Snapdragon 660 mid-range SoC as well, which is going to be manufactured on Samsung’s 14nm FinFET LPP process. It will be an octa-core chipset based on Qualcomm’s 64-bit Kryo architecture, with a clock speed of up to 2.2 GHz. The chipset will integrate the Adreno 512 GPU, X10 LTE modem, and support for dual-channel LPDDR4X-1866 memory and UFS 2.1 flash storage.
The Qualcomm Snapdragon 835 SoC is expected to enter mass production in early 2017, while the mid-range Snapdragon 660 SoC could go into mass production in the second quarter of 2017.