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BenQ DC S30 Digital Music Camera

BenQ brings you DC S30, one of the first in its class to combine the ability to take photographs, play music, record voice memos, and shoot continuous amount of video – making it an all-in-one personal digital entertainment center. In addition, BenQ S30 features 3.34 Mega-pixels, 3X optical zoom, and an 180º flip-out LCD preview

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Intel To Devise Faster DRAM Interface

Intel will quietly signal what may be the company's most aggressive move to influence system memory architectures. In a paper entitled "A 2 Gb/s Point-to-Point Heterogeneous Voltage-Capable DRAM Interface", Intel authors will disclose some details of a set of test chips that have validated an Intel-designed high-speed DRAM interconnect scheme. By using 1.4V point-to-point links,

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NVIDIA Unveiled PCI Express GPUs

NVIDIA today unveiled the industry's first top-to-bottom family of PCI Express graphics processing units (GPUs), all designed to take full advantage of the additional bandwidth and features that this new I/O interconnection standard delivers. By using an innovative PCI Express (PCX) high-speed interconnect (HSI), a complex piece of networking technology that performs seamless, bi-directional interconnect

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AMD Opteron HE & EE Series

AMD announced an expansion of its awarding-winning AMD Opteron(tm) processor family, featuring low- and mid-power products. With the new low-power AMD Opteron processors, enterprise customers can now employ a common infrastructure based on AMD64 technology at all levels of their enterprise environments - from high-performance clusters to blade servers. The

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ASUS Upcoming Motherboards

ASUS P5AD2 : i925X+ICH6R, LGA775, PCI-E, Dual DDR-II ASUS P5GD2 : i915P+ICH6R, LGA775, PCI-E, Dual DDR-II ASUS P5GD1 : i915P+ICH6R, LGA775, PCI-E, Dual DDR-I ASUS P4GD1 : i915P+ICH6R, µPGA478, PCI-E, Dual DDR-I ASUS P5GD2-VM : i915G+ICH6R, LGA775, PCI-E, Dual DDR-II ASUS P5SDC : SiS656 + SiS965, LGA775, PCI-E, Dual DDRI/DDRII ASUS P5VD1

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IBM 90nm, SOI, Strained Silicon Chip

IBM today announced it has developed a new method of manufacturing low power, high performance microprocessors using an industry-first combination of silicon-on-insulator (SOI), strained silicon and copper wiring technologies. IBM is putting the technique immediately to work in volume 90 nanometer production at its 300mm manufacturing facility. Powered by 58 million transistors, 64-bit

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