Samsung today introduced the first 128GB embedded memory for smartphones based on the UFS (Universal Flash Storage) 2.0 standard for next-gen flagship smartphones.
The main highlight of the new UFS memory is the significant improvement in speed. The UFS standard makes use of the ‘Command Queue’ technology to speed up command executions in SSDs through a serial interface. This helps improve speeds over the 8-bit parallel-interface-based eMMC storage solution. Samsung is claiming that the newly announced UFS memory can handle up to 19,000 input/output operations per second (IOPS) for random reading, 2.7 times faster than usual for most eMMC based storage used in high-end smartphones currently. Random read speed is claimed to be 12 times faster than your average high-speed memory card, so the performance improvement with these new memory chips should be very apparent.
Samsung’s new UFS embedded memory line comes in three storage capacities – 128GB, 64GB, and 32GB, twice the capacity of the company’s eMMC 5.1 line-up. Since Samsung has started mass production of the new memory chips, we can expect to see smartphones with 128GB of ultra-fast storage arrive in the second half of the year. We also wonder if the Galaxy S6 will be the first device to come with these new UFS memory chips as rumors so far point to three storage options on the Galaxy S6, the exact capacities the new UFS memory line-up comes in.